Datasheet > 2SC4249

2SC4249

更新时间： 2024-11-16 06:23:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	45K
描述
Silicon NPN Epitaxial

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中文翻译

获取价格

数据手册

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2SC4249 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC4249

Features

High gain: Gpe = 24dB (typ.) (f = 200 MHz)

Low noise: NF = 2.0dB (typ.) (f = 200 MHz)

Excellent forward AGC characteristics

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature

P^C

100

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Symbol

I^CBO

Testconditons

Min

Typ

Max

100

Unit

VCB = 25 V, IE = 0

VEB = 2 V, IC = 0

IEBO

V^(BR)CEOIC = 1 mA, IB = 0

h^FE

C^re

VCE = 10 V, IC = 2 mA

150

0.35

650

300

0.5

Reverse transfer capacitance

Transition frequency

Power gain

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 10 V, IC = 2 mA

MHz

f^T

400

G^pe

3.2

5.1

V^CC= 12 V, VAGC = 1.4 V,f = 200 MHz

VCC = 12 V, GR = 30dB, f = 200 MHz

Noise figure

2.0

AGC voltage

V^AGC

3.6

4.4

Marking

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