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2SC4250FV(TPL3,Z) PDF预览

2SC4250FV(TPL3,Z)

更新时间: 2024-11-16 20:47:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 143K
描述
RF Small Signal Bipolar Transistor

2SC4250FV(TPL3,Z) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

2SC4250FV(TPL3,Z) 数据手册

 浏览型号2SC4250FV(TPL3,Z)的Datasheet PDF文件第2页浏览型号2SC4250FV(TPL3,Z)的Datasheet PDF文件第3页 
2SC4250FV  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC4250FV  
TV VHF Mixer Applications  
Unit: mm  
1.2±0.05  
0.8±0.05  
Low reverse transfer capacitance: C = 0.45 pF (typ.)  
re  
Absolute Maximum Ratings (Ta = 25°C)  
1
2
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
3
V
CBO  
V
CEO  
V
EBO  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
20  
3
50  
V
I
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
25  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C (Note)  
1.Base  
T
j
125  
VESM  
2.Emitter  
3.Collector  
T
stg  
55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
Weight: 1.5mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note: when mounted on a 25.4 mm × 25.4mm × 1.6 mm glass epoxy printed circuit board.  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
1
2010-02-10  

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