生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.31 | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4179FA4-T1 | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SUPER | |
2SC4179FA4-T1-AT | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,50MA I(C),TO-236VAR | |
2SC4179FA4-T2-A | RENESAS |
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50mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3 | |
2SC4179-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SUPER | |
2SC4179-T1FA3 | NEC |
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Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SUPER | |
2SC4180 | TYSEMI |
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Small dimension High DC current gain Collector-base voltage VCBO 120 V | |
2SC4180 | KEXIN |
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NPN Silicon Epitaxial Transistor | |
2SC4180 | HTSEMI |
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TRANSISTOR (NPN) | |
2SC4180 | NEC |
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AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
2SC4180 | CJ |
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SOT-323 |