Datasheet > 2SC4180

2SC4180

更新时间： 2024-09-27 14:54:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	651K
描述
SOT-323

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中文翻译

获取价格

技术参数
数据手册

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2SC4180 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

2SC4180 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SC4180 TRANSISTOR (NPN)

FEATURES

SOT–323

 High DC Current Gain

APPLICATIONS

 General Purpose Amplification

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

120

Unit

1. BASE

Collector-Base Voltage

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

150

833

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

120

Typ

Max

Unit

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=120V, I_E=0

V_EB=5V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=6V, I_C=1mA

V_CE=6V, I_C=0.1mA

I_C=10mA, I_B=1mA

V_CE=6V, I_C=1mA

135

100

900

DC current gain

h_FE(2)

V_CE(sat)

V_BE

0.3

Collector-emitter saturation voltage

Base-emitter voltage

0.55

0.65

f_T

MHz

Transition frequency

C_ob

V_CB=30V, I_E=0, f=1MHz

2.5

Collector output capacitance

*Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

D15

135–270

D15

D16

200–400

D16

D17

D18

450–900

D18

RANGE

300–600

MARKING

D17

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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与2SC4180相关器件

型号	品牌	获取价格	描述	数据表
2SC4180-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SUPER
2SC4180D15	NEC	获取价格	BJT
2SC4180D15-A	NEC	获取价格	暂无描述
2SC4180D15-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SUPER
2SC4180D15-T2-A	RENESAS	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4180D16	NEC	获取价格	BJT
2SC4180D16-A	NEC	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4180D16-T1	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SUPER
2SC4180D16-T2-A	RENESAS	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4180D16-T2-AT	RENESAS	获取价格	TRANSISTOR,BJT,NPN,120V V(BR)CEO,50MA I(C),TO-236VAR