Datasheet > 2SC4157_2014

2SC4157_2014

更新时间： 2022-02-26 13:29:23

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	154K
描述
Silicon NPN Power Transistors

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数据手册

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2SC4157_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC4157

DESCRIPTION

·With TO-3P(I) package

·High V_CEO

·High speed switching

APPLICATIONS

·Switching regulator and high voltage

switching applications

·High speed DC-DC converter applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3P(I)) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

600

450

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector current-peak

Base current

Open base

Open collector

I_CM

I_B

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-55~150

℃

T_j

T_stg

12 3

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