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2SC4014TV3/NP PDF预览

2SC4014TV3/NP

更新时间: 2024-11-13 03:09:11
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
2页 101K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC4014TV3/NP 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.2 pF
集电极-发射极最大电压:19 V配置:SINGLE
最小直流电流增益 (hFE):56最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1100 MHz

2SC4014TV3/NP 数据手册

 浏览型号2SC4014TV3/NP的Datasheet PDF文件第2页 

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2SC4014TV3/NQ ROHM

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2SC4014TV3/Q ROHM

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2SC4014TV3M ROHM

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2SC4014TV3N ROHM

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2SC4014TV3P ROHM

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2SC4014TV3Q ROHM

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2SC4014TV4/MP ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4014TV4/NQ ROHM

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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4014TV4/P ROHM

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili