Datasheet > 2SC3665-O(TPF2,Q)

2SC3665-O(TPF2,Q)

更新时间： 2024-11-27 19:54:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	115K
描述
TRANSISTOR,BJT,NPN,120V V(BR)CEO,800MA I(C),SC-71

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数据手册

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2SC3665-O(TPF2,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	0.8 A
配置：	Single	最小直流电流增益 (hFE)：	80
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC3665-O(TPF2,Q) 数据手册

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2SC3665

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3665

Audio Power Amplifier Applications

Unit: mm

Driver-Stage Amplifier Applications

•

Complementary to 2SA1425.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

120

Collector-emitter voltage

Emitter-base voltage

Collector current

800

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

1000

150

JEDEC

JEITA

―

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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