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2SC3666_04 PDF预览

2SC3666_04

更新时间: 2024-11-24 07:30:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
3页 116K
描述
Audio Power Amplifier Applications

2SC3666_04 数据手册

 浏览型号2SC3666_04的Datasheet PDF文件第2页浏览型号2SC3666_04的Datasheet PDF文件第3页 
2SC3666  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC3666  
Audio Power Amplifier Applications  
Unit: mm  
High DC current gain: h  
= 100 to 320  
High power dissipation: P = 1000 mW  
FE (1)  
C
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
30  
V
V
CBO  
CEO  
EBO  
30  
5
1
V
I
A
C
Base current  
I
B
0.1  
A
Collector power dissipation  
Junction temperature  
P
1000  
150  
mW  
°C  
°C  
C
T
j
Storage temperature range  
T
stg  
55 to 150  
JEDEC  
JEITA  
TOSHIBA  
2-7D101A  
Weight: 0.2 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 30 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
30  
100  
100  
nA  
nA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I = 10 mA, I = 0  
C B  
(BR) CEO  
h
FE (1)  
V
V
= 2 V, I = 100 mA  
100  
320  
CE  
C
DC current gain  
(Note)  
h
= 2 V, I = 800 mA  
40  
0.5  
1.5  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 800 mA, I = 80 mA  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 2 V, I = 800 mA  
0.9  
150  
13  
C
Transition frequency  
f
= 2 V, I = 100 mA  
C
MHz  
pF  
T
Collector output capacitance  
C
ob  
= 10 V, f = 1 MHz  
Note: h  
classification O: 100 to 200, Y: 160 to 320  
FE (1)  
Marking  
C3666  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
1
2004-07-07  

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