Datasheet > 2SC3507_2014

2SC3507_2014

更新时间： 2024-10-03 01:19:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	187K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3507_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3507

DESCRIPTION

·With TO-3PFa package

·High-speed switching

·High collector-base voltage V_CBO

·Satisfactory linearity of forward

current transfer ratio h_FE

APPLICATIONS

·For high-speed switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1000

800

Open collector

I_CM

Collector current-peak

Base current

I_B

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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