Datasheet > 2SC3513

2SC3513

更新时间： 2024-10-02 12:32:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
1页	86K
描述
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V

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中文翻译

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数据手册

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2SC3513 数据手册

SSSMMMDDD TTTyyypppeee

TTrraannssiissttIIooCCrrss

Product specification

2SC3513

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

500

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Symbol

Testconditons

Min

Typ

Max

Unit

V^(BR)CBO

I^CEO

I^EBO

I^CBO

h^FE

I^C= 10 mA, I^E= 0

ìA

V^CE= 10 V, R^BE=

V^EB= 1 V, I^C= 0

V^CB= 12 V, I^E= 0

V^CE= 5 V, I^C= 20 mA

V^CB= 5 V, I^E= 0, f = 1 MHz

V^CE= 5 V, I^C= 20 mA

120

1.0

6.0

250

1.5

C^ob

GHz

V^CE= 5 V, I^C= 20 mA,f = 900 MHz

V^CE= 5 V, I^C= 5 mA,f = 900 MHz

Noise figure

1.6

Marking

IS-

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