2SC3468L-F

更新时间： 2024-09-27 13:04:15

品牌	Logo	应用领域
友顺 - UTC		晶体显示器晶体管输出元件高压
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3页	130K
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2SC3468L-F 数据手册

UTC 2SC3468

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR FOR

VIDEO OUTPUT OF HIGH-DEFINITION

CRT DISPLAYS

FEATURES

* High breakdown voltage: V_CBO, V_CEO≧300V

* Small reverse transfer capacitance and excellent high

frequency characteristicF

SOT-89

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: 2SC3468L

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

SYMBOL

RATINGS

300

UNIT

V_CBO

V_CEO

V_EBO

I_C

I_CP

P_C

300

100

200

1.0

0 ~ +125

-65 ~ +125

℃

Junction Temperature

Storage Temperature

T_J

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta = 25℃)

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Output Capacitance

SYMBOL

I_CBO

I_EBO

h_FE

f_T

V_{CE (sat)}

V_{BE (sat)}

TEST CONDITIONS

V_CB= 200V, I_E= 0

V_EB= 4V, I_C= 0

V_CE= 10V, I_C= 10mA

V_CE= 30V, I_C= 10mA

I_C= 20mA, I_B= 2mA

MIN

TYP MAX UNIT

0.1

320

µA

150

MHz

0.6

1.0

V_{(BR) CBO}I_C= 10µA, I_E= 0

I_C= 1mA, R_BE= ∞

V_{(BR) EBO}I_E= 10µA, I_C= 0

300

V_{(BR) CEO}

Cob

Cre

V_CB= 30V, f = 1MHz

2.6

1.8

Reverse Transfer Capacitance

UTC UNISONIC TECHNOLOGIES CO., LTD.

www.unisonic.com.tw

QW-R208-037,A

12 3

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与2SC3468L-F相关器件

型号	品牌	获取价格	描述	数据表
2SC3470	HITACHI	获取价格	Silicon NPN Epitaxial
2SC3470D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SPAKVAR
2SC3470-D	HITACHI	获取价格	SMALL SIGNAL TRANSISTOR
2SC3470-D	RENESAS	获取价格	SMALL SIGNAL TRANSISTOR
2SC3470DRF	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
2SC3470DRR	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
2SC3470DTZ	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
2SC3470E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SPAKVAR
2SC3470-E	RENESAS	获取价格	SMALL SIGNAL TRANSISTOR
2SC3470ERF	RENESAS	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SPAK-3