Datasheet > 2SC3466_2014

2SC3466_2014

更新时间： 2024-02-06 17:17:58

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	243K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3466_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3466

DESCRIPTION

·With TO-3PN package

·High breakdown voltage and high reliability.

·Fast switching speed

·Wide area of safe operation

APPLICATIONS

·Switching regulator applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1200

650

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

120

150

-55~150

℃

T_j

T_stg

12 3 4

中文翻译

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与2SC3466_2014相关器件

型号	品牌	获取价格	描述	数据表
2SC3466K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 650V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SC3466L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 650V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SC3466M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 650V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SC3467	SANYO	获取价格	Transistors for TV Display Video Output Use
2SC3467-AE	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3467-AF	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3467C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 100MA I(C) \| TO-92VAR
2SC3467C-AF	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-226
2SC3467D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 100MA I(C) \| TO-92VAR
2SC3467D-AE	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-226