Datasheet > 2SC3457_2014

2SC3457_2014

更新时间： 2022-02-26 13:01:07

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	230K
描述
Silicon NPN Power Transistors

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2SC3457_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3457

DESCRIPTION

·With TO-220C package

·High breakdown voltage and high reliability

·Fast switching speed.

·Wide ASO (Safe Operating Area)

APPLICATIONS

·800V/3A switching regulator applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1100

800

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

1.5

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

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