生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1 pF | 集电极-发射极最大电压: | 19 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3082KT147 | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/M | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/MP | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/MQ | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/N | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/NP | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/NQ | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147/Q | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3082KT147M | ROHM |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
2SC3082KT147Q | ROHM |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |