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2SC3086 PDF预览

2SC3086

更新时间: 2024-11-14 07:30:39
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 105K
描述
Silicon NPN Power Transistors

2SC3086 数据手册

 浏览型号2SC3086的Datasheet PDF文件第2页浏览型号2SC3086的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3086  
DESCRIPTION  
·With TO-220C package  
·High breakdown voltage  
: VCBO=800V(Min)  
·Fast switching speed.  
·Wide area of safe operation  
APPLICATIONS  
·500V/3A switching regulator applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
Open emitter  
Open base  
800  
V
V
V
A
A
A
500  
Open collector  
7
3
6
ICP  
Collector current-peak  
Base current  
PW300µs, Duty Cycle10%  
TC=25ꢀ  
IB  
1
40  
PC  
Collector dissipation  
W
1.75  
150  
-55~150  
Junction temperature  
Storage temperature  
Tj  
Tstg  

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