2SC3074-Y(Q)

更新时间： 2024-09-26 13:04:15

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	184K
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中文翻译

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数据手册

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2SC3074-Y(Q) 数据手册

2SC3074

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3074

High Current Switching Applications

Unit: mm

•

Low collector saturation voltage: V = 0.4 V (max) (I = 3 A)

CE (sat) C

High speed switching time: t

Complementary to 2SA1244

= 1.0 µs (typ)

stg

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

1.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

JEDEC

JEITA

―

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2005-02-01

12 3 4 5

中文翻译

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