Datasheet > 2SC2717

2SC2717

更新时间： 2024-01-27 05:58:17

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	172K
描述
NPN Plastic-Encapsulated Transistor

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数据手册

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2SC2717 数据手册

2SC2717

0.05A , 30V

NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES



High Gain：G_pe=33 dB(Typ.)(f =45MHz)

Good Linearity of h_FE



Base

Emitter

Collector

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

°C

P_C

300

T_J, T_STG

125, -55~125

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ. Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100μA, I_E=0

I_C=10mA, I_B=0

I_E=100μA, I_C=0

0.1

240

0.2

1.5

μA

V_CB=30V, I_E=0

Emitter Cut – Off Current

I_EBO

V_EB=3V, I_C=0

DC Current Gain

h_FE

V_CE=12.5V, I_C=12.5mA

I_C=15mA, I_B=1.5mA

Collector to Emitter Saturation Voltage

Base to Emitter Saturation voltage

Transition Frequency

V_CE(sat)

V_BE(sat)

f_T

300

0.8

MHz V_CE=12.5V, I_C=12.5mA

Collector Output Capacitance

Collector to Base Time Constant

C_ob

V_CB=10V, I_E=0, f=30MHz

V_CB=10V, I_E=-1mA, f=30MHz

_CC=12.5V, I_E=-12.5mA,

f=45MHz

.rbb’

C_C

Power Gain

Gpe

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Mar-2011 Rev. A

Page 1 of 3

12 3

中文翻译

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