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2SC2721-MA PDF预览

2SC2721-MA

更新时间: 2024-09-27 19:19:11
品牌 Logo 应用领域
日电电子 - NEC 开关晶体管
页数 文件大小 规格书
6页 107K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

2SC2721-MA 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.52最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):110 MHzBase Number Matches:1

2SC2721-MA 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC2721  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
Complementary transistor with 2SA1154  
High PT in small dimension and high voltage  
PT = 1 W, VCEO = 60 V  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)*  
PT  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
60  
60  
V
5.0  
V
0.7  
A
1.0  
A
1
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50%  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
IEBO  
hFE1  
hFE2  
VBE  
Conditions  
VCB = 60 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
VEB = 5.0 V, IC = 0  
100  
nA  
VCE = 1.0 V, IC = 0.1 A *  
VCE = 1.0 V, IC = 0.5 A *  
VCE = 6.0 V, IC = 10 mA  
IC = 0.5 A, IB = 50 mA *  
IC = 0.5 A, IB = 50 mA *  
90  
50  
200  
150  
635  
0.12  
0.90  
13  
400  
DC current gain  
DC base voltage  
600  
700  
0.35  
1.2  
mV  
V
Collector saturation voltage  
Base saturation voltage  
Output capacitance  
Gain bandwidth product  
Turn-on time  
VCE(sat)  
VBE(sat)  
Cob  
V
VCB = 6.0 V, IE = 0, f = 1.0 MHz  
VCE = 6.0 V, IE = 10 mA  
Refer to the test circuit.  
pF  
MHz  
ns  
fT  
110  
60  
ton  
Storage temperature  
Turn-off time  
tstg  
600  
650  
ns  
toff  
ns  
* Pulse test PW 350 µs, duty cycle 2% per pulsed  
hFE CLASSIFICATION  
Marking  
hFE1  
MA  
LA  
KA  
90 to 180  
135 to 270  
200 to 400  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16149EJ1V0DS00  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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