生命周期: | Not Recommended | 包装说明: | MPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.22 | 最大集电极电流 (IC): | 0.02 A |
基于收集器的最大容量: | 1.2 pF | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 940 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2620QCTR | RENESAS |
获取价格 |
暂无描述 | |
2SC2621 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 | |
2SC2621 | FOSHAN |
获取价格 |
TO-126F | |
2SC2621C | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 | |
2SC2621D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 | |
2SC2621E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 | |
2SC2623 | FUJI |
获取价格 |
Transistor | |
2SC2623 | NJSEMI |
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BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS | |
2SC2624 | ISC |
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Silicon NPN Power Transistor | |
2SC2625 | FUJI |
获取价格 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |