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2SC2411K PDF预览

2SC2411K

更新时间: 2024-11-18 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 129K
描述
TRANSISTOR (NPN)

2SC2411K 数据手册

  
RoHS  
2SC2411K  
SOT-23-3L  
2SC2411K TRANSISTOR (NPN)  
1. BASE  
2. EMITTER  
3. COLLECTOR  
FEATURES  
Power dissipation  
PCM  
:
200  
mW (Tamb=25)  
2. 80¡ À0. 05  
1. 60¡ À0. 05  
Collector current  
ICM  
Collector-base voltage  
(BR)CBO: 40  
:
500  
V
mA  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
MIN  
40  
32  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
Ic=1mA, IB=0  
V
IE=100µA, IC=0  
µA  
µA  
VCB=20V, IE=0  
1
1
Emitter cut-off current  
IEBO  
VEB=4V, IC=0  
DC current gain  
hFE  
VCE=3V, IC=100mA  
IC=500mA, IB=50mA  
VCE=5V, IC=20mA, f=100MHz  
VCB=10V, IE=0, f=1MHz  
82  
390  
0.4  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
V
MHz  
pF  
fT  
250  
6.0  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
P
Q
R
82-180  
120-270  
180-390  
Range  
Marking  
CP  
CQ  
CR  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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