生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
最大集电极电流 (IC): | 0.2 A | 基于收集器的最大容量: | 6 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 500 MHz |
最大关闭时间(toff): | 40 ns | 最大开启时间(吨): | 20 ns |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC1621-T2B | NEC |
获取价格 |
200 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-59, 3 PIN |
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2SC1621-T2B-A | RENESAS |
获取价格 |
Bipolar Power Transistors, , / |
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2SC1621-T2BB4 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC |
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2SC1622 | NEC |
获取价格 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
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2SC1622A | TYSEMI |
获取价格 |
High DC current gain.Collector-base voltage VCBO 120 V |
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2SC1622A | NEC |
获取价格 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
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2SC1622A | KEXIN |
获取价格 |
NPN Silicon Epitaxial Transistor |
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2SC1622A-A | RENESAS |
获取价格 |
50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN |
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2SC1622AD15 | RENESAS |
获取价格 |
50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN |
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2SC1622A-D15 | RENESAS |
获取价格 |
50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3 |
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