Datasheet > 2SC1622A

2SC1622A

更新时间： 2024-11-24 06:22:11

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	37K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

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数据手册

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2SC1622A 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

2SC1622A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High DC current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

Total power dissipation

Junction temperature

Storage temperature

P^T

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

500

Max

0.05

900

Unit

ìA

VCB = 120V, IE=0

VEB = 5V, IC=0

I^EBO

ìA

V^CE=6V , IC = 1mA

V^CE=6V , IC = 0.1mA

135

100

DC current gain *

h^FE

Collector-emitter saturation voltage *

Base-emitter voltage *

VCE(sat) IC = 10mA , IB = 1mA

0.07 0.30

0.55 0.58 0.65

V^BE

f^T

VCE = 6V , IC = 1mA

VCE = 6V , IE = -1mA

Gain bandwidth product

Output capacitance

110

1.6

MHz

C^ob

VCB = 30V , IE = 0 , f = 1.0MHz

2.5

* Pulse test: tp

350 ìs; d

0.02.

hFE Classification

Marking

hFE

D15

135 270

D16

200 400

D17

300 600

D18

450 900

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2SC1622AD15-T2B-A	RENESAS	获取价格	50mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SC1622AD15-T2B-AT	RENESAS	获取价格	TRANSISTOR,BJT,NPN,120V V(BR)CEO,50MA I(C),TO-236VAR
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