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2SC1213A PDF预览

2SC1213A

更新时间: 2024-11-02 06:25:19
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 73K
描述
NPN Silicon General Purpose Transistor

2SC1213A 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.59Base Number Matches:1

2SC1213A 数据手册

 浏览型号2SC1213A的Datasheet PDF文件第2页 
2SC1213 & 2SC1213A  
NPN Silicon  
General Purpose Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
FEATURE  
TO-92  
Low frequency amplifier  
Power dissipation  
3
PCM:  
0.4 W (Tamb=25)  
2
Collector current  
1
2
3
ICM:  
Collector-base voltage  
V(BR)CBO 2SC1213  
2SC1213A :  
0.5  
A
1
:
:
35  
50  
V
V
1. Emitter  
2. Collector  
3. Base  
Operating and storage junction temperature range  
TJ, Tstg:  
-55to +150℃  
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
35  
50  
Collector-base breakdown voltage  
2SC1213  
V(BR)CBO  
V
Ic= 10µA , IE=0  
2SC1213A  
35  
50  
Collector-emitter breakdown voltage 2SC1213  
V(BR)CEO  
IC= 1 mA , IB=0  
V
2SC1213A  
V(BR)EBO  
ICBO  
4
V
Emitter-base breakdown voltage  
Collector cut-off current  
IE=10µA, IC=0  
VCB= 20V , IE=0  
VCE=3V, IC= 10mA  
VCE=3V, IC= 500mA  
0.5  
µA  
hFE(1)  
60  
10  
320  
DC current gain  
hFE(2)  
VCE(sat)  
VBE  
IC= 150mA, IB= 15 mA  
VCE= 3V, IC= 10 mA  
0.2  
0.6  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
0.75  
CLASSIFICATION OF hFE(1)  
Rank  
B
C
D
60-120  
100-200  
160-320  
Range  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

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