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2SC1213A PDF预览

2SC1213A

更新时间: 2024-11-02 06:16:39
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管
页数 文件大小 规格书
5页 154K
描述
Silicon NPN Epitaxial

2SC1213A 技术参数

是否无铅: 含铅生命周期:Not Recommended
零件包装代码:TO-92包装说明:TO-92(1), 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.35最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SC1213A 数据手册

 浏览型号2SC1213A的Datasheet PDF文件第2页浏览型号2SC1213A的Datasheet PDF文件第3页浏览型号2SC1213A的Datasheet PDF文件第4页浏览型号2SC1213A的Datasheet PDF文件第5页 
2SC1213, 2SC1213A  
Silicon NPN Epitaxial  
REJ03G0684-0200  
(Previous ADE-208-1048)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency amplifier  
Complementary pair with 2SA673 and 2SA673A  
Outline  
RENESAS Packaode: PRSS0003DA-A  
(Package nam(1))  
1. Emitter  
2. Collector  
3. Base  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
13A  
Unit  
V
V
4
500  
V
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
00  
Tj  
150  
150  
Tstg  
–55 to +150  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 4  

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