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2SB911M PDF预览

2SB911M

更新时间: 2024-11-21 22:22:23
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 132K
描述
Medium power Transistor(-32V, -2A)

2SB911M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):2 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SB911M 数据手册

 浏览型号2SB911M的Datasheet PDF文件第2页浏览型号2SB911M的Datasheet PDF文件第3页浏览型号2SB911M的Datasheet PDF文件第4页 
Transistors  
Medium power Transistor(*32V,*2A)  
2SB1188 / 2SB1182 / 2SB1240 /  
2SB822 / 2SB1277 / 2SB911M  
FFeatures  
FExternal dimensions (Unit: mm)  
1) Low VCE(sat).  
VCE(sat) = *0.5V (Typ.)  
(IC / IB = *2A / *0.2A)  
2) Complements the 2SD1766 /  
2SD1758 / 2SD1862 / 2SD1189F /  
2SD1055 / 2SD1919 / SD1227M.  
FStructure  
Epitaxial planar type  
PNP silicon transistor  
(96-131-B24)  
215  

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