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2SB821C1S PDF预览

2SB821C1S

更新时间: 2024-01-18 22:20:28
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
2页 81K
描述
300mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB821C1S 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SB821C1S 数据手册

 浏览型号2SB821C1S的Datasheet PDF文件第2页 

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