是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POWER, MINIMOLD PACKAGE-3 | Reach Compliance Code: | compliant |
风险等级: | 5.71 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 110 MHz | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB798DM-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
2SB798DM-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,25V V(BR)CEO,1A I(C),SOT-89 | |
2SB798DM-T1-AZ | RENESAS |
获取价格 |
1000mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SB798DM-T2 | RENESAS |
获取价格 |
1000mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SB798DM-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,25V V(BR)CEO,1A I(C),SOT-89 | |
2SB798DM-T2-AZ | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
2SB798G-X-AB3-R | UTC |
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POWER TRANSISTOR | |
2SB798-HF_15 | KEXIN |
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PNP Transistors | |
2SB798-K-HF | KEXIN |
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PNP Transistors | |
2SB798-L-HF | KEXIN |
获取价格 |
PNP Transistors |