生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 110 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB798-T2 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL | |
2SB798-T2DK | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL | |
2SB799 | TYSEMI |
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Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA) | |
2SB799 | KEXIN |
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PNP Silicon Epitaxial Transistor | |
2SB799 | NEC |
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PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |
2SB799 | RENESAS |
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700mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3 | |
2SB799-AY | RENESAS |
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TRANSISTOR,BJT,PNP,50V V(BR)CEO,700MA I(C),SOT-89 | |
2SB799-AZ | NEC |
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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
2SB799-HF_15 | KEXIN |
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PNP Transistors | |
2SB799-K-HF | KEXIN |
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PNP Transistors |