是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.7 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 135 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB799MM | ETC |
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BJT | |
2SB799MM-AZ | NEC |
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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB799MM-T1-AY | RENESAS |
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TRANSISTOR,BJT,PNP,50V V(BR)CEO,700MA I(C),SOT-89 | |
2SB799MM-T2-AY | RENESAS |
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TRANSISTOR,BJT,PNP,50V V(BR)CEO,700MA I(C),SOT-89 | |
2SB799-T2MM | NEC |
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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, POWER, | |
2SB800 | NEC |
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PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |
2SB800 | KEXIN |
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PNP Silicon Epitaxial Transistor | |
2SB800 | TYSEMI |
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World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V | |
2SB800 | RENESAS |
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300mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3 | |
2SB800-AZ | NEC |
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Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, POWER, |