Datasheet > 2SB799-L-HF

2SB799-L-HF

更新时间： 2024-11-20 01:08:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1170K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB799-L-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB799-HF

1.70 0.1

■ Features

● Low Collector Saturation Voltage:

CE(sat)< -0.4V (Ic = -500mA, I

B = -50mA )

● Complement to 2SD1000-HF

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-60

-50

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse(Note.1)

Collector Power Dissipation

Junction Temperature

-0.7

-1

℃

150

Storage Temperature range

stg

-55 to 150

Note.1: PW≦10ms,Duty Cycle≦50%

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-60

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -60 V , I

E=0

-0.1

Emitter cut-off current

^EB= -5V , IC=0

Collector-emitter saturation voltage (Note.1)

Base - emitter saturation voltage (Note.1)

Base - emitter voltage (Note.1)

CE(sat)

BE(sat)

=-500mA, I

=-50mA

-0.16 -0.4

-0.9 -1.2

-600 -630 -700

C=-500mA, I

^CE= -6V, I

CE= -1V, I

CB= -6V, I

^CE= -6V, I

C= -10mA

C= -100mA

C= -500mA

200

120

400

DC current gain (Note.1)

hFE

Collector output capacitance

Transition frequency

= 0 mA,f=1MHz

= 10mA

120

MHz

Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SB799-M-HF

90-180

2SB799-L-HF

135-270

2SB799-K-HF

200-400

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