Datasheet > 2SB798-L-HF

2SB798-L-HF

更新时间： 2024-09-30 01:08:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1425K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB798-L-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB798-HF

1.70 0.1

■ Features

● Low Collector Saturation Voltage:

CE(sat)< -0.4V (Ic = -1.0A, I

● Excellent DC Current Gain Linearity :

FE = 100 Typ. (VCE = -1.0V, I = -1.0A)

B = -100mA )

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-30

-25

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse (Note.1)

Collector Power Dissipation

Junction Temperature

-1

-1.5

℃

150

Storage Temperature range

Note.1: PW≦10ms,Duty Cycle≦50%

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-30

-25

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I

E=0

C=0

CBO

EBO

CB= -30 V , I

^EB= -5V , I

-0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-1 A, I

=-100mA

-0.25 -0.4

-1 -1.2

-600 -640 -700

C=-1 A, I

^CE= -6V, I

CE= -1V, I

CB= -6V, I

^CE= -6V, I

C= -10mA

C= -100mA

C= -1A

200

100

400

DC current gain

hFE

Collector output capacitance

Transition frequency

E= 10mA,f=1MHz

C= -10mA

110

MHz

Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SB798-M-HF

90-180

2SB798-L-HF

135-270

2SB798-K-HF

200-400

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与2SB798-L-HF相关器件

型号	品牌	获取价格	描述	数据表
2SB798L-X-AB3-R	UTC	获取价格	POWER TRANSISTOR
2SB798-M-HF	KEXIN	获取价格	PNP Transistors
2SB798-T1	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI
2SB798-T1-AY	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,1A I(C),SOT-89
2SB798-T1DK	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB798-T1DL	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB798-T1DM	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB798-T2	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB798-T2DK	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL
2SB799	TYSEMI	获取价格	Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)