2SB710TSK

更新时间： 2024-02-01 01:01:12

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中文翻译

获取价格

数据手册

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2SB710TSK 数据手册

Transistors

2SB0710 (2SB710), 2SB0710A (2SB710A)

Silicon PNP epitaxial planar type

Unit: mm

For general amplification

+0.10

–0.05

Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)

0.40

+0.10

–0.06

0.16

■ Features

• Large collector current I_C

• Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing and the magazine packing

(0.95) (0.95)

■ Absolute Maximum Ratings T_a= 25°C

1.9 ^0.1

+0.20

Parameter

Symbol

Rating

−30

Unit

2.90

–0.05

2SB0710

2SB0710A

2SB0710

2SB0710A

V_CBO

Collector-base voltage

(Emitter open)

10˚

−60

V_CEO

−25

Collector-emitter voltage

(Base open)

1: Base

2: Emitter

−50

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

T_j

− 0.5

−1

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Marking Symbol:

• 2SB0710: C

• 2SB0710A: D

200

°C

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

−30

−60

−25

−50

−5

Typ

Max

Unit

2SB0710

2SB0710A

2SB0710

2SB0710A

V_CBO

I_C= −10 µA, I_E= 0

Collector-base voltage

(Emitter open)

V_CEO

I_C= −10 mA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

V_EBO

I_CBO

I_E= −10 µA, I_C= 0

µA



Collector-base cutoff current (Emitter open)

V_CB= −20 V, I_E= 0

− 0.1

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −10 V, I_C= −150 mA

V_CE= −10 V, I_C= −500 mA

340



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −300 mA, I_B= −30 mA

V_BE(sat)I_C= −300 mA, I_B= −30 mA

− 0.35 − 0.60

Base-emitter saturation voltage ^*

−1.1

200

−1.5

Transition frequency

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Product of no-rank is not

classified and have no

marking symbol for rank.

Rank

85 to 170

120 to 240

170 to 340

No-rank

h_FE1

85 to 340

2SB0710

Marking

symbol

2SB0710A

Note) The part numbers in the parenthesis show conventional part number.

Publication date: May 2003

SJC00048CED

12 3

中文翻译

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