Datasheet > 2SB649C(TO-126)

2SB649C(TO-126)

更新时间： 2024-01-24 09:21:31

品牌	Logo	应用领域
友顺 - UTC		/
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5页	134K
描述
Transistor

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技术参数
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2SB649C(TO-126) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

2SB649C(TO-126) 数据手册

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

BIPOLAR POWER GENERAL

PURPOSE TRANSISTOR

APPLICATIONS

* Low frequency power amplifier complementary pair with

UTC 2SB669/A

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS _{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-base voltage

SYMBOL

VCBO

RATING

-180

UNIT

Collector-emitter voltage

VCEO

2SB649

2SB649A

-120

-160

Emitter-base voltage

Collector current

Collector peak current

Collector power dissipation

Collector power dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

VEBO

lc_(peak)

-5

-1.5

-3

°C

150

-55 ~ +150

TSTG

ELECTRICAL CHARACTERISTICS _{(Ta=25°C, unless otherwise specified)}

PARAMETER

SYMBOL

V_(BR)CBO

V_(BR)CEO

TEST CONDITIONS

I_C=-1mA, I_E=0

MIN TYP MAX UNIT

Collector to bse breakdown voltage

Collector to emitter breakdown

-180

I_C=-10mA, R_BE=∞

voltage

2SB649

-120

-160

-5

2SB649A

Emitter to base breakdown voltage

Collector cut-off current

V_{(BR) EBO}

ICBO

I_E=-1mA, I_C=0

µA

VCB=-160V, IE=0

-10

hFE1

VCE=-5V, Ic=-150mA (note)

VCE=-5V, Ic=-500mA (note)

VCE=-5V, Ic=-150mA (note)

VCE=-5V, Ic=-500mA (note)

320

2SB649

DC current gain

hFE2

hFE1

hFE2

200

2SB649A

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R204-006,A

12 3 4 5

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