Datasheet > 2SB1386_1

2SB1386_1

更新时间： 2024-11-18 05:57:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	115K
描述
Low frequency transistor (−20V, −5A)

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中文翻译

获取价格

数据手册

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2SB1386_1 数据手册

2SB1386 / 2SB1412

Transistors

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412

zFeatures

zDimensions (Unit : mm)

1) Low V^CE(sat).

2SB1386

2SB1412

V^CE(sat)= −0.35V (Typ.)

(I^C/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118.

zStructure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

ROHM : CPT3

EIAJ : SC-63

Abbreviated symbol: BH

∗

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−30

−20

−6

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

−5

A(DC)

A(Pulse)

Collector current

−10

∗

)

0.5

2SB1386

Collector power

dissipation

2SB1412

W(Tc=25°C

°C

Junction temperature

Storage temperature

1 Single pulse, Pw=10ms

150

Tstg

−55 to 150

°C

∗

2 When mounted on a 40

40×

0.7 mm ceramic board.

∗

Rev.B

1/4

12 3 4 5

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