Datasheet > 2SB1386_10

2SB1386_10

更新时间： 2024-11-18 07:30:03

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	510K
描述
PNP Silicon Low Frequency Transistor

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中文翻译

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数据手册

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2SB1386_10 数据手册

2SB1386

-5A, -30V

PNP Silicon Low Frequency Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES

ꢀ

Low VCE(sat)

Excellent DC current gain characteristics

Complements the 2SD2098

CLASSIFICATION OF h_FE

2SB1386-P

82~180

BHP

2SB1386-Q

2SB1386-R

180~390

BHR

Product-Rank

Range

120~270

BHQ

Marking

Millimeter

PACKAGE INFORMATION

REF.

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

4.40

3.94

1.40

2.30

0.40

0.58

Package

MPQ

LeaderSize

7’ inch

1.50 TYP

3.00 TYP

0.32

0.35

0.52

0.44

SOT-89

1.50

0.89

1.70

1.2

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

-30

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-20

-6

-5

-10

0.5

A(DC)

Collector Current -Continuous

I_C

A(Pulse) ⁽¹⁾

W ⁽²⁾

Collector Power Dissipation

P_D

Junction & Storage Temperature

T_J, T_STG

150, -55~150

°C

Note:

(1) Single pulse, Pw=10ms.

(2) When mounted on a 40⋅40⋅0.7 mm ceramic board.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-30

-20

-6

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

IC=-50µA

I_C= -1mA

I_E= -50µA

V_CB= -20V

-0.5

-1.0

390

μA

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain *

I_EBO

V_CE(sat)

h_FE

V_EB= -5V

I_C/I_B= -4A/-0.1A

V_CE= -2V, I_C= -0.5A

Transition frequency

f_T

120

MHz V_CE= -6V, I_E= -50mA, f=30MHz

pF V_CB= -20V, I_E=0, f=1MHz

Output Capacitance

C_OB

∗Measured using pulse current.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Dec-2010 Rev. B

Page 1 of 3

12 3

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