是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.77 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 70 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1357T114E | ROHM |
获取价格 |
3A, 50V, PNP, Si, POWER TRANSISTOR, HRT, 3 PIN |
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2SB1358 | ROHM |
获取价格 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
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2SB1358D | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-225VAR |
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2SB1358E | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-225VAR |
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2SB1358F | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-225VAR |
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2SB1358T114 | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1358T114/D | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1358T114/DE | ROHM |
获取价格 |
暂无描述 |
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2SB1358T114/DF | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1358T114/E | ROHM |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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