Datasheet > 2SB1296T

2SB1296T

更新时间： 2024-01-04 03:46:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	192K
描述
TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 800MA I(C) \| SPAK

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2SB1296T 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	0.8 A	配置：	Single
最小直流电流增益 (hFE)：	280	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB1296T 数据手册

Ordering number:EN2468

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1296/2SD1936

AF Amplifier Applications

Applications

Package Dimensions

unit:mm

· AF power amplifier, medium-speed switching, small-

sized motor drivers.

2033

[2SB1296/2SD1936]

Features

· Large current capacity.

· Low collector to emitter saturation voltage.

· Wide ASO.

B : Base

C : Collector

E : Emitter

SANYO : SPA

( ) : 2SB1296

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)15

(–)5

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)0.8

(–)3

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

300

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)12V, I =0

(–)100

(560)*

800*

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

EBO

=(–)2V, I =(–)50mA

140*

=(–)2V, I =(–)800mA

* : The 2SB1296/2SD1936 are classified by 50mA h as follows :

2SB1296

2SB1936

140

280 200

400 280

560

560 400

800

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1598HA (KT)/4207TA, TS No.2468–1/5

12 3 4 5

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与2SB1296T相关器件

型号	品牌	获取价格	描述	数据表
2SB1296U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 800MA I(C) \| SPAK
2SB1297	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency output amplification)
2SB1297Q	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SB1297R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SB1299	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power amplification)
2SB1299A	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1299P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| SOT-186
2SB1299Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| SOT-186
2SB12U12-12	ETC	获取价格	1 and 2 Watt SB Series DC/DC Converters
2SB12U5	ETC	获取价格	1 and 2 Watt SB Series DC/DC Converters

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