Datasheet > 2SB1073

2SB1073

更新时间： 2024-09-25 06:23:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	51K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

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数据手册

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2SB1073 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB1073

Features

Low collector-emitter saturation voltage VCE(sat)

Large peak collector current ICP

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

Unit

-30

Collector-emitter voltage

Emitter-base voltage

Peak collector current

Collector current

-20

-7

-4

I^C

-7

Collector power dissipation

Junction temperature

Storage temperature

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Testconditons

Min

-30

-20

-7

Typ

Max

Unit

Collector-base voltage

IC = -10 ìA, IE = 0

IC = -1 mA, IB = 0

IE = -10 ìA, IC = 0

VCB = -30 V, IE = 0

VEB = -7 V, IC = 0

VCE = -2 V, IC = -2 A

Collector-emitter voltage

Emitter-base voltage

Collector-base cutoff current

Emitter-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

-0.1

315

-1.0

ìA

I^EBO

h^FE

120

V^CE(sat)IC = -3 A, IB = - 0.1 A

-0.6

120

f^T

VCB = -6 V, IE = 50 mA, f = 200 MHz

VCB = -20 V, IE = 0, f = 1 MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

h^FE

120 205

180 315

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2SB1073-Q	MCC	获取价格	Silicon PNP epitaxial planer Transistors
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2SB1073-Q-T	MCC	获取价格	Transistor
2SB1073-Q-TP	MCC	获取价格	Small Signal Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
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