Datasheet > 2SB1073-Q-HF

2SB1073-Q-HF

更新时间： 2022-02-26 12:28:37

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科信 - KEXIN		/
页数	文件大小	规格书
2页	891K
描述
PNP Transistors

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数据手册

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2SB1073-Q-HF 数据手册

SMD Type

Transistors

PNP Transistors

2SB1073-HF

■ Features

1.70 0.1

● Low collector to emitter saturation voltage VCE(sat)

●Large peak collector current I^CP

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-30

-20

-7

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

-4

-7

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-30

-20

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA，I =0

= -100μA， I

CB= -30V , I =0

^EB= -7V , I =0

E=0

C=0

CBO

EBO

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-3 A, I

=-100mA

-0.6

=-3 A, I

-1.2

315

hFE

CE= -2V, I

CB = –20V, I

CE= -6V, I = 50mA,f=200MHz

C= -2 A

120

Collector output capacitance

Transition frequency

= 0, f = 1MHz

120

MHz

■ Classification of hfe

Type

Range

Marking

2SB1073-Q-HF 2SB1073-R-HF

120-205 180-315

IQ IR

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