2SB1071

更新时间： 2024-09-24 22:45:03

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描述
Silicon PNP epitaxial planar type

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数据手册

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2SB1071 数据手册

Power Transistors

2SB1071, 2SB1071A

Silicon PNP epitaxial planar type

For low-voltage switching

Unit: mm

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• High-speed switching

φ 3.1 0.1

• Full-pack package which can be installed to the heat sink with one screw

1.3 0.2

■ Absolute Maximum Ratings T_C= 25°C

1.4 0.1

Parameter

Symbol

Rating

Unit

+0.2

–0.1

0.5

0.8 0.1

2SB1071

2SB1071A

2SB1071

2SB1071A

V_CBO

−40

Collector-base voltage

(Emitter open)

−50

2.54 0.3

5.08 0.5

V_CEO

−20

Collector-emitter voltage

(Base open)

1: Base

−40

2: Collector

3: Emitter

EIAJ: SC-67

2 3

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

−4

TO-220F-A1 Package

Peak collector current

Collector power dissipation

−8

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−20

−40

Typ

Max

Unit

2SB1071

2SB1071A

2SB1071

2SB1071A

V_CEO

I_C= −10 mA, I_B= 0

Collector-emitter voltage

(Base open)

I_CBO

V_CB= −40 V, I_E= 0

V_CB= −50 V, I_E= 0

V_EB= −5 V, I_C= 0

−50

µA

Collector-base cutoff

current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_EBO

h_FE1

µA

V_CE= −2 V, I_C= − 0.1 A

V_CE= −2 V, I_C= −1 A



h_FE2

260

− 0.5

−1.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −2 A, I_B= − 0.1 A

V_BE(sat)I_C= −2 A, I_B= − 0.1 A

f_T

t_on

t_stg

t_f

V_CE= −5 V, I_C= − 0.5 A, f = 10 MHz

150

0.3

0.4

0.1

MHz

µs

I_C= −2 A, I_B1= − 0.2 A, I_B2= 0.2 A

V_CC= −20 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

60 to 120

90 to 180

130 to 260

Publication date: February 2003

SJD00041AED

12 3 4

中文翻译

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