Datasheet > 2SB1073

2SB1073

更新时间： 2023-12-06 20:09:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1174K
描述
SOT-89-3L

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2SB1073 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SB1073 TRANSISTOR (PNP)

1. BASE

FEATURES

Low collector-emitter saturation voltage V_CE(sat)

Large peak collector current I_C

2. COLLECTOR

3. EMITTER

MARKING

I Q

I R

Solid dot = Green molding compound

device.

1 2 0 -2 0 5

1 8 0 -3 1 5

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

-30

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-7

Collector Current -Continuous

Collector Power Dissipation

-4

P_C

0.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

-30

-20

-7

μA

I_CBO

I_EBO

h_FE

V_CB=-30V,I_E=0

-0.1

315

-1

μA

Emitter cut-off current

V_EB=-7V,I_C=0

DC current gain

V_CE=-2V,I_C=-2A

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-3A,I_B=-100mA

V_CE=-6V,I_C=-50mA,f=200MHz

V_CB=-20V,I_E=0,f=1MHz

120

MHz

Collector output capacitance

CLASSIFICATION OF h_FE

Rank

C_ob

Range

120-205

180-315

Marking

www.jscj-elec.com

Rev. - 2.2

12 3

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