Datasheet > 2SB1056_15

2SB1056_15

更新时间： 2024-11-13 01:16:47

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	168K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1056_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1056

DESCRIPTION

·With TO-3PFa package

·Complement to type 2SD1487

·High f_T

·Satisfactory linearity of h_FE

·Wide area of safe operation

APPLICATIONS

·For high power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-140

-5

UNIT

Open emitter

Open base

Open collector

-7

I_CP

Collector current-peak

-12

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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