Datasheet > 2SB0940A|2SB940A

2SB0940A|2SB940A

更新时间： 2022-01-18 16:06:00

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描述
Power Device - Power Transistors - General-Purpose power amplification

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2SB0940A|2SB940A 数据手册

Power Transistors

2SB0940 (2SB940), 2SB0940A (2SB940A)

Silicon PNP epitaxial planar type

For power amplification

Unit: mm

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

For TV vertical deflection output

Complementary to 2SD1264, 2SD1264A

φ 3.1 0.1

■ Features

• High collector-emitter voltage (Base open) V_CEO

• Large collector power dissipation P_C

• Full-pack package which can be installed to the heat sink with one screw

1.3 0.2

1.4 0.1

+0.2

–0.1

0.5

0.8 0.1

■ Absolute Maximum Ratings T_C= 25°C

Parameter

Symbol

Rating

Unit

2.54 0.3

5.08 0.5

Collector-base voltage (Emitter open) V_CBO

−200

1: Base

2SB0940

V_CEO

−150

Collector-emitter voltage

(Base open)

2: Collector

3: Emitter

EIAJ: SC-67

2 3

2SB0940A

−180

Emitter-base voltage (Collector open) V_EBO

−6

TO-220F-A1 Package

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

−2

−3

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CBO

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

I_C= −50 µA, I_E= 0

−200

−150

−180

−6

2SB0940

V_CEO

I_C= −5 mA, I_B= 0

Collector-emitter voltage

(Base open)

2SB0940A

Emitter-base voltage (Collector open)

Base-emitter voltage

V_EBO

V_BE

I_E= −500 µA, I_C= 0

V_CE= −10 V, I_C= −400 mA

V_CB= −200 V, I_E= 0

−1

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CBO

I_EBO

−50

240

µA



V_EB= −4 V, I_C= 0

h_FE1

V_CE= −10 V, I_C= −150 mA

V_CE= −10 V, I_C= −400 mA

h_FE2

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −500 mA, I_B= −50 mA

f_TV_CE= −10 V, I_C= − 0.5 A, f = 10 MHz

−1

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

60 to 140

100 to 240

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJD00021BED

12 3

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