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2SA821STP PDF预览

2SA821STP

更新时间: 2024-10-14 13:04:11
品牌 Logo 应用领域
罗姆 - ROHM 晶体放大器晶体管高压
页数 文件大小 规格书
3页 68K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN

2SA821STP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-72
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.7最大集电极电流 (IC):0.03 A
配置:SINGLE最小直流电流增益 (hFE):56
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

2SA821STP 数据手册

 浏览型号2SA821STP的Datasheet PDF文件第2页浏览型号2SA821STP的Datasheet PDF文件第3页 
2SA821S  
Transistors  
High-voltage Amplifier Transistor (  
210V,  
30mA)  
2SA821S  
z
(Unit : mm)  
External dimensions  
zFeatures  
SPT  
1) High breakdown voltage, (VCER = 210V )  
2) Complements the 2SC1651S.  
4.0  
2.0  
0.45  
0.45  
2.5  
0.5  
5.0  
(1) (2) (3)  
(1)Emitter  
(2)Collector  
(3)Base  
Taping specifications  
z
(Ta=25 C)  
°
Absolute maximum ratings  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
210  
210  
5  
30  
V
CES  
EBO  
V
V
V
I
C
A
Collector power dissipation  
Junction temperature  
P
C
250  
W
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
55 to +150  
RBE=10kΩ  
z
(Ta=25 C)  
Electrical characteristics  
°
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
210  
210  
5  
50  
8
V
V
I
I
I
C
= −50µA  
= −100µA, RBE=10kΩ  
C
V
E
= −50µA  
I
CBO  
EBO  
CE(sat)  
FE  
µA  
µA  
V
V
CB= −150V  
EB= −4.5V  
Emitter cutoff current  
I
1  
1  
1  
270  
V
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
= −2mA/0.2mA  
= −5A  
=2mA , f=30MHz  
=0A , f=1MHz  
h
82  
MHz  
pF  
V
V
V
CE= −3V, I  
CE= −5V , I  
CE= −10V , I  
C
Transition frequency  
f
T
E
Output capacitance  
Cob  
E
z
Packaging specifications and hFE  
Type  
2SA821S  
Package  
SPT  
PQ  
hFE  
Code  
TP  
Basic ordering unit (pieces)  
5000  
Rev.A  
1/2  

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