Datasheet > 2SA2087

2SA2087

更新时间： 2022-12-12 02:27:17

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	87K
描述
Power transistor

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数据手册

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2SA2087 数据手册

2SA2087

Transistors

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−30

−6

−

Typ.

Max.

−

−1.0

Unit

Condition

= −1mA

= −100µA

CB= −20V

EB= −4V

BVCEO

BVCBO

BVEBO

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

−

CBO

µA

EBO

Emitter cut-off current

= −1.0A

= −100mA

CE= −2V

CE (sat)

−500

Collector-emitter saturation voltage

DC current gain

−

−200

hFE

390

−

120

−

C= −100mA

∗

CE= −10V

−

MHz

Transition frequency

−

350

=100mA

f=10MHz

CB= −10V

=0mA

f=1MHz

Corrector output capacitance

= −2A

Ton

−

Turn-on time

Storage time

Fall time

−

100

B^B2¹=200mA

= −200mA

Tstg

CC −25V

∗Non repetitive pulse

!h^FERANK

120−270

180−390

!Electrical characteristic curves

1000

−10

Ta=25°C

CC= −25V

/ I =10 / 1

CE= −2V

10ms

1ms

500µs

−1

Ta=125°C

Ta=25°C

100ms

100

Tstg

Ta= −40°C

100

−0.1

Ton

−0.01

Single

non repetitive

Pulsed

−0.01

−0.001

−0.01

−0.1

−1

−10

−0.1

−1

−10

−0.1

−1

−10

−100

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I

(A)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Switching Time

Fig.3 DC Current Gain vs.

Fig.1 Safe Operating Area

Collector Current (Ι)

1000

−10

Ta=25°C

IC / IB=10 / 1

CE= −5V

CE= −3V

CE= −2V

100

−1

−0.1

−1

−0.1

Ta=125°C

Ta=25°C

/ I

=20/1

=10/1

Ta= −40°C

−0.01

−0.001

−0.01

−0.1

−1

−10

−0.001

−0.01

−0.1

−1

−10

−0.001

−0.01

−0.1

−1

−10

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I

(A)

Fig.5 Collector-Emitter Saturation

Fig.4 DC Current Gain vs.

Fig.6 Collector-Emitter Saturation

Voltage vs. Collector Current (ΙΙ)

Voltage vs. Collector Current (Ι)

Collector Current (ΙΙ)

2/3

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