Datasheet > 2SA2088_11

2SA2088_11

更新时间： 2022-04-01 15:15:40

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	934K
描述
Medium power transistor (-60V, -0.5A)

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2SA2088_11 数据手册

Medium power transistor (60V, 0.5A)

2SA2088

Features

Dimensions (Unit : mm)



1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA)

2) Low saturation voltage, typically

UMT3



(Typ. 150mV at IC = 100mA, IB = 10mA)

3) Strong discharge power for inductive load and capacitance load.

4) Complements the 2SC5876

2.0

0.9

0.7

0.2

0.3

(

)

( )

0.650.65

1.3

Applications

0.15

Small signal low frequency amplifier

High speed switching

(1) Emitter

(2) Base

Each lead has same dimensions

(3) Collector

Abbreviated symbol : VM

Structure

PNP Silicon epitaxial planar transistor

Packaging specifications

Package

Taping

T106

Code

Type

Basic ordering unit (pieces)

3000

2SA2088

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Symbol

Limits

−60

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−60

−6

−0.5

Collector current

∗1

∗2

Pulsed

−1.0

°C

Power dissipation

200

Junction temperature

150

Tstg

Range of storage temperature

−55 to 150

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

www.rohm.com

2011.03 - Rev.B

1/3

12 3 4

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