Datasheet > 2SA2080_05

2SA2080_05

更新时间： 2022-12-26 14:36:10

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	166K
描述
Silicon PNP Epitaxial

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2SA2080_05 数据手册

2SA2080

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min

–30

–5

Typ

Max

Unit

Test conditions

I_C= –10 µA, I_E= 0

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

–0.5

500

µA

V_CB= –20 V, I_E= 0

Emitter cutoff current

I_EBO

V_EB= –2 V, I_C= 0

DC current transfer ratio

h_FE

160

V_CE= –12 V, I_C= –2 mA

I_C= –10 mA, I_B= –1 mA

V_CE= –12 V, I_C= –2 mA

Collector to emitter saturation voltage

Base to emitter voltage

V_CE(sat)

V_BE

–0.2

–0.75

Notes: 1. The 2SA2080 is grouped by h_FEas follows.

Grade

Mark

h_FE

160 to 320

250 to 500

Rev.1.00 Aug 10, 2005 page 2 of 5

123 4 5 6

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