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2SA2047RT106 PDF预览

2SA2047RT106

更新时间: 2024-11-18 15:32:19
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
3页 33K
描述
Transistor,

2SA2047RT106 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):180
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SA2047RT106 数据手册

 浏览型号2SA2047RT106的Datasheet PDF文件第2页浏览型号2SA2047RT106的Datasheet PDF文件第3页 
2SA2047  
Transistor  
Medium power transistor (30V, 0.5A)  
2SA2047  
!External dimensions (Units : mm)  
!Features  
1) High speed switching. (Tf : Typ. : 40ns at IC = 500mA)  
2) Low saturation voltage, typically  
UMT3  
(Typ. : 150mV at IC = 100A, IB = 100mA)  
3) Strong discharge power for inductive load and  
capacitance load.  
1.25  
2.1  
4) Complements the 2SC5729  
(1)Emitter  
(2)Base  
(3)Collector  
Each lead has same dimensions  
Abbreviated symbol : UV  
0.1Min.  
!Applications  
Small signal low frequency amplifier  
High speed switching  
!Structure  
PNP Silicon epitaxial planar transistor  
!Packaging specifications  
Package  
Taping  
T106  
Code  
Type  
Basic ordering unit (pieces)  
3000  
2SA2047  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
30  
Unit  
V
V
VCBO  
VCEO  
VEBO  
6  
V
I
C
0.5  
1.0  
200  
150  
A
A
mW  
°C  
°C  
Collector current  
1
2
I
CP  
Power dissipation  
Junction temperature  
P
Tj  
C
Range of storage temperature Tstg  
55~+150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land  
1/3  

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