生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.77 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 18 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1861T105/P | ROHM | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |
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2SA1861T105N | ROHM | 2A, 400V, PNP, Si, POWER TRANSISTOR |
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2SA1861T105P | ROHM | 2A, 400V, PNP, Si, POWER TRANSISTOR |
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2SA1862 | ROHM | High-voltage Switching Transistor (−400V, −2A) |
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2SA1862/N | ROHM | Small Signal Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, |
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2SA1862/NP | ROHM | Small Signal Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, |
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