2SA1845M

更新时间： 2024-02-06 08:41:23

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	140K
描述
TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SIP

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技术参数
数据手册

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2SA1845M 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	MP-10	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.58	Base Number Matches：	1

2SA1845M 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1845

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SA1845 is a power transistor developed for high-speed switching and features a high h^FEat low V^CE(sat).

This transistor is ideal for use as a driver in DC/DC converters and actuators.

In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus

contributing to mounting cost reduction.

FEATURES

• Auto-mounting possible in radial taping specifications

• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions

• High h^FEand low V^CE(sat):

V^CE(sat)≤ −0.3 V

h^FE≥ 100

@I^C= −3.0 A, I^B= −0.15 A

@V^CE= −2.0 V, I^C= −1.0 A

• Fast switching speed

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

P^T

Conditions

Ratings

−150

Unit

−100

−7.0

−5.0

PW ≤ 300 µs, duty cycle ≤ 2%

Ta = 25°C

−10

−2.5

Total power dissipation

Junction temperature

Storage temperature

1.8

°C

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15592EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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